C0sm01169j 3268..3272

نویسندگان

  • Arif O. Gozen
  • Jiajia Zhou
  • Kristen E. Roskov
  • An-Chang Shi
  • Jan Genzer
  • Richard J. Spontak
چکیده

Block copolymers remain one of the most extensively studied and utilized classes of macromolecules due to their extraordinary abilities to (i) self-assemble spontaneously into a wide variety of soft nanostructures and (ii) reduce the interfacial tension between, and thus compatibilize, immiscible polymer pairs. In bilayered thin-film laminates of immiscible homopolymers, block copolymers are similarly envisaged to stabilize such laminates. Contrary to intuition, we demonstrate that highly asymmetric block copolymers can conversely destabilize a laminate, as discerned from macroscopic dewetting behavior, due to dynamic competition between copolymer self-organization away from and enrichment at the bilayer interface. The mechanism of this counterintuitive destabilization is interrogated through complementary analysis of laminates containing mixtures of stabilizing/destabilizing diblock copolymers and timedependent Ginzburg–Landau computer simulations. This combination of experiments and simulations reveals a systematic progression of supramolecular-level events that establish the relative importance of molecular aggregation and lateral interfacial structuring in a highly nonequilibrium environment.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

A short synthesis of d-[1-(14) C]-serine of high enantiomeric purity.

Herein, we report a short, three-step synthesis of d-[1-(14) C]-serine (4) in high enantiomeric purity. Starting from [(14) C]-KCN and 2-(benzyloxy)acetaldehyde, Strecker reaction using (R)-1-phenylethylamine as the chiral auxiliary gave two diastereomeric aminonitriles 1 and 2 in the ratio of 4:3, which were conveniently separated and purified chromatographically. Following hydrolysis and subs...

متن کامل

Structure oriented compact model for advanced trench IGBTs without fitting parameters for extreme condition: Part I

Compact model for expressing turn-off waveform for advanced trench gate IGBTs is proposed even under high current density condition. The model is analytically formulated only with device structure parameters so that no fitting parameters are required. The validity of the model is confirmed with TCAD simulation for 1.2 kV to 6.5 kV class IGBTs. The proposed turn-off model is sufficiently accurat...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2011